Si - Precursor Quality Control

EasyTube^® 3000 - SiQC
Horizontal Silicon Epitaxial CVD System

Download EasyTube^® 3000 - SiQC Brochure

Download EasyTube^® 3000 – SiQC Quality Control Solution for TCS, DCS, SiCl4 and SiH4 precursor material testing for Polysilicon Manufacturing

EasyTube^® 3000 - SiQC is designed to grow ultra high purity (intrinsic) monocrystalline silicon layers on a monocrystalline silicon substrate for qualifying feedstock for Polysilicon manufacturing facilities.

EasyTube^® 3000 - SiQC provides optimum control over Silicon epitaxial thick film grown on processing of float zone (FZ) wafers. A watercooled, high purity quartz process tube is provided to minimize tube deposits by keeping the quartz tube cool even during longest deposition runs. Minimum tube deposits allow more runs between tube cleanings.

EasyTube^® 3000 - SiQC can be configured with 3 different options to meet your exact needs:

• Continuous Chlorosilane Feed Option (DCS,TCS,SiCl₄), including liquid feed/drain, UHP Argon purge feed line, liquid flow controller, vaporizer and sample/UHP Argon purge line (vent to scrubber). Allows for real time characterization of liquid precursor material by sampling the feedstock continuously.

• Continuous Silane Feed Option allows for real time characterization of gaseous silane by sampling the feedstock continuously.
• Chlorosilane Bubbler Feed Option allows for batch sampling of the feedstock via removable Chlororosilane Bubbler (made of 316 stainless steel electropolished to a 15 ra finish including isolation valves).

EasyTube^® 3000 - SiQC Standard Configuration:

• CVDWinPrC™ based process control software for Real Time Process Control, Data Logging and Display, Recipe Generation and Editing
• Preprogrammed Recipes for Silicon Epitaxial Deposition
• Processes up to two (2) Float Zone Wafers per run
• High Purity Susceptor
• Cantilevered Automatic Substrate Loading/Unloading System
• Loadlock Isolates the Process Tube from Ambient Atmosphere During Loading and Unloading
• High Purity, Water Cooled, Cold Wall Quartz Process Tube
• RF Induction Heating
• Process Temperatures capable >700°C-1500°C
• 2 Mass Flow Controlled Gas Lines: UHP Argon & Hydrogen
• Integrated Vacuum System for Evacuation of Process Tube to a Base Pressure of <20 mTorr
• Application Customized Safety Systems
  
• Factory Training on System Start-Up, Operation & Maintenance
  
• Onsite Installation Assistance and Training
  
• Comprehensive Software and Hardware Safety Interlocks
  
• One (1) Year Warranty
  
• Semi - S2/S8 and CE Certified

EasyTube^® 3000 - SiQC Modular Options:

• Clean Hood with Iris Ports to Minimize Contamination When Loading and Unloading Test Si Wafer(s) with high purity susceptor
• Continuous Chlorosilane Feed Option (DCS,TCS,SiCl₄)
• Continuous Silane Feed Option
• Chlorosilane Bubbler Feed Option - Removable Bubbler
• Hydrogen Purifier (20 SLPM Capacity) for Delivering High Purity Hydrogen
• EasyGas™ Hazardous Gas Cabinets
• EasyPanel™ Gas Panels for Argon, Nitrogen, Helium, Oxygen
• EasyExhaust™ Gas Conditioning System
• Set up and Operational Processing at the CVD Application Lab
• Extended Warranty

CVD Equipment Corporation (CVD) offers turn-key solutions with support equipment such as the EasyGas™ 1000 Cabinets, the EasyPanel™ UHP Panel and the EasyExhaust™ 410 Gas Conditioning Systems. The Easy Gas™ is capable of safely delivering UHP Hydrogen while the EasyExhaust™ will pyrolyze and wet scrub the exhaust process effluents. The EasyPanel™ is used to deliver UHP Argon to the SiQC Systems.

Our field proven performance and solid customer base establishes CVD as the clear choice for a Silicon Precursor Quality Control Test Sample Manufacturing System.

To discuss your needs please call us at (631) 981-7081 or email us at sales@cvdequipment.com.

* Note: measured with He cooled Fourier Transform Photo-Luminescence. ppta = parts per trillion atomic

* Note: Electrical varies with country; facilities requirements vary with system options.

Please contact us for further details.