Plasma Enhanced CVD System (PECVD)

Plasma Enhanced Chemical Vapor Deposition (PECVD) is a process used to deposit thin films from a gaseous state onto a substrate in a solid state using relatively low temperatures.  A major advantage of PECVD is that film formation can occur on substrates at a lower temperature than is possible in the conventional CVD process due to the creation of plasma.  The plasma is generally created by RF power or DC discharge between two electrodes, with the space between filled with the reactive gases.  Plasma Enhanced CVD films can be deposited at reduced temperatures with increased deposition rates, and improved adhesion. Some of the desirable properties of PECVD films are good adhesion, low pinhole density, good step coverage, and uniformity.

PECVD systems have entrenched their place in the electronics sector because of their flexibility in depositing many thin films such as:

• Silicon Nitride (SiN)
• Silicon Oxide (SiO)
• Silicon Dioxide (SiO₂)
• Silicon OxyNitride (SiON)
• Diamond Like Carbon (DLC)
• Amorphous Silicon (A-Si)
• Poly Silicon (poly-Si)

CVD Equipment Corporation offers the EasyTube™ 4000 PECVD system through our First Nano division.

Features Include:

• Cold Wall Reactor with Cylindrical Three Zone Infrared Heating System for Process Temperatures > 900 °C
• Temperature Uniformity: +/- 3 °C
• DC Plasma: 2.5KW 1000/500 Volt or RF Plasma: 1KW@ 13.56 MHz
• Base Pressure <10 mTorr Operation Pressure: 100 mTorr
• Wafer Size to 6"
• Materials can be deposited
  • Nanomaterials: Vertically Aligned CNT's below 600 °C
  • Si Nanowire
  • Thin Film Solar Cell: Amorphous Silicon, micro- Crystalline Silicon, Polysilicon
  • Dielectric Film: SiO₂ , Si₃N₄
  • Diamond and Diamond like Carbon thin film