Low Pressure CVD System (LPCVD)

Low Pressure Chemical Vapor Deposition (LPCVD) is a process used for the growth of oxides, nitrides, polysilicon, SiC, TCO and Si/SiGe epitaxial coatings as well as nanowires and many other materials. It deposits coatings with excellent purity and uniformity with good step coverage.

LPCVD system features include:

• Processing of wafers up to 300 mm in diameter
• Operational temperatures from 100 °C > 1300 °C
• Closed tube processing for a high purity and reproducible environment resulting in increased production yields
• Moving furnace element for fast heat-up and cool down, and to insure the proper process atmosphere exists prior to processing
• Cantilever Loading System for automatic noncontact loading of the wafer boat for minimal particle generation.
• Cascade temperature control using external (furnace) and internal (process) thermocouples for real time continuous in-situ control of temperature profiles
• Better than 0.5 °C flat zone up to 48" in length
• Independent computer control of each process tube
• 1 through 4 stack systems available with right or left hand load station