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Atomic Layer Deposition System (ALD)

Atomic Layer Deposition (ALD) is similar to Chemical Vapor Deposition (CVD) except in ALD the process precursors are introduced into the process chambers separately. The deposition breaks into two half reactions where the film thickness can be precisely controlled and ultra thin film can be made.

CVD Equipment provides ALD systems with various types of thin film deposition including oxides such as Al2O3, TiO2, SnO, HfO2, ZnO, Fe2O3 nitrides such as TiN, TaN, WN and metals such as Ru, Ir, W as well as other materials.

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atomic layer deposition (ALD)  system
multihead ald chamber

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