Plasma Enhanced CVD System (PECVD)

We offer the EasyTube^® 4000 PECVD Series - 4200 & 4300, an advanced turnkey Plasma Enhanced Chemical Vapor Deposition (PECVD) process tool system, through our First Nano division. The EasyTube™ 4200 is a small footprint PECVD for wafer sizes up to 4," while the EasyTube™ 4300 offers up to a 6" wafer and an optional loadlock.

Some features Include:

• Cold Wall Reactor with Cylindrical Three Zone Infrared Heating System for Process Temperatures > 1100 °C
• Temperature Uniformity: +/- 3 °C
• DC Plasma: 1KW, 1000/500 Volt, RF Plasma 600W @13.56 MHz (ET4300)
• Low Pressure Operation (100 mtorr – 700 torr), < 30 mtorr Base Pressure
• Wafer Size 4" (for ET4200), Wafer Size 6" (for ET4300)
• Materials can be deposited
  • Nanomaterials: Vertically Aligned CNT's below 600 °C
  • Si Nanowire
  • Thin Film Solar Cell: Amorphous Silicon, micro- Crystalline Silicon, Polysilicon
  • Dielectric Film: SiO₂, Si₃N₄
  • Diamond and Diamond like Carbon thin film
    

Please visit our First Nano website for more details on the EasyTube^® 4000 PECVD Series - 4200 & 4300 System.

Flexibility in Depositing Many Thin Films

Plasma Enhanced Chemical Vapor Deposition (PECVD) is a process used to deposit thin films from a gaseous state onto a substrate in a solid state using relatively low temperatures.  A major advantage of PECVD is that film formation can occur on substrates at a lower temperature than is possible in the conventional CVD process due to the creation of plasma.  The plasma is generally created by RF power or DC discharge between two electrodes, with the space between filled with the reactive gases.  Plasma Enhanced CVD films can be deposited at reduced temperatures with increased deposition rates, and improved adhesion. Some of the desirable properties of PECVD films are good adhesion, low pinhole density, good step coverage, and uniformity.

PECVD equipment has entrenched their place in the electronics sector because of their flexibility in depositing many thin films such as:

• Silicon Nitride (SiN)
• Silicon Oxide (SiO)
• Silicon Dioxide (SiO₂)
• Silicon OxyNitride (SiON)
• Diamond Like Carbon (DLC)
• Amorphous Silicon (a-Si)
• Poly Silicon (poly-Si)

Please contact us for further details.