Silicon Oxides

CVD offers single tube and multi-tube thermal CVD and single wafer PECVD for Silicon oxides deposition.

Silicon oxides are generally used as an insulation and barrier layer. CVD's method is used for growing un-doped SiO2 and doped SiO2 .

Undoped SiO2 can be made from the reaction of SiH4 and O2 at relative low temperature (300-500 °C). Tetraethylorthosilicate (TEOS) is often used instead of SiH4. TEOS based deposition provides better step coverage and reflow properties. SiO2 deposition with TEOS and O2 is done at higher temperature (650-750 °C). Using O2 (Ozone) and O2 mixture instead of pure O2 can reduce the deposition temperature.

Doped SiO2 includes Phosphorus-doped Glass (PSG) and Borophos-phosilicate Glass (BPSG). They are deposited by adding phosphine and/or diborane in the deposition. Adding the dopant to SiO2 reduces the melting temperature of SiO2 and increases the etching rate.

Silicon oxides can be made by both thermal CVD and PECVD. CVD Equipment offers solutions for Silicon oxides deposition with both methods and precursors to meet your requirements.

Please contact us for further details.