Oxidation

Silicon dioxide can be made by thermal oxidation of silicon wafers at a high temperature. The oxidation process can be produced by using 3 different methods depending on the film quality needed.

These methods are:

1. Dry oxidation using pure O2 gas at high temperature (around 1000 °C) produces high density and pinhole free oxide layer. Nitrous oxide can be used to produce oxynitride film.
2. Wet oxidation using O2 through a water bubbler occurs at 800 °C to 1100 °C. It produces lesser quality oxide but the oxidation rate is much faster.
3. Pyrogenic oxidation uses a separate heater to generate hot water vapor stream from the reaction of H2 and O2. It minimizes the temperature disturbance caused by the cool water vapor used in regular wet oxidation.

Here at CVD Equipment, we offer offer single tube and multi-tube thermal CVD for batch wafer oxidation processes.