Oxidation Furnaces

CVD offers single tube & multi-tube thermal CVD for batch wafer oxidation processing.

Silicon dioxide can be made by thermal oxidation of silicon wafers at a high temperature. The oxidation process can be produced by using 3 different methods depending on the film quality needed which are:

1. Dry oxidation using pure O₂ gas at high temperature (around 1000 °C) produces high density and pinhole free oxide layer. Nitrous oxide can be used to produce oxynitride film.
2. Wet oxidation using O₂ through a water bubbler occurs at 800 °C to 1100 °C. It produces lesser quality oxide but the oxidation rate is much faster.
3. Pyrogenic oxidation uses a separate heater to generate hot water vapor stream from the reaction of H2 and O₂. It minimizes the temperature disturbance caused by the cool water vapor used in regular wet oxidation.

Please contact us for further details.