Diffusion

P and N type dopant are typically diffused thermally into the substrate in a furnace at a high temperature and atmospheric pressure. The dopant source can be gases (PH₃, B₂H₆), liquids (POCl₃, BCl₃), or solids (P₂O₅, B₂O₃ wafer pre-diffusion follow with a drive in step).

CVD Equipment provides single tube and multi-tube furnaces for batch wafer processes. The system can be configured for 4", 6" and 8" wafers with 10 and up to more than 100 wafers per load capacity to meet your research and production requirement.